Quick primer on basic nMOS process steps. The piece traces the shift from bipolar and pMOS to nMOS dominance and then to CMOS for much lower static power. Key fabrication points are careful silicon substrate selection, LOCOS field isolation and the Kooi white ribbon issue, poly silicon gates that enable self aligned source and drain, and threshold tuning by ion implantation for enhancement and depletion devices. Full series at Florisera
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